BCX70 series small signal transistors (npn) features npn silicon epitaxial planar transistors for switching and af amplifier applications. suited for low level, low noise, low frequency applications in hybrid cicuits. low current, low voltage. as complementary types, bcx71 series pnp transistors are recommended. mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: maximum ratings and electrical characteristics ratings at 25?c ambient temperature unless otherwise specified symbol value unit collector-base voltage v cbo 45 volts collector-emitter voltage v ceo 45 volts emitter-base voltage v ebo 5.0 volts collector current (dc) i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma power dissipation p tot 250 mw junction temperature t j 150 ?c storage temperature range t s e65 to +150 ?c thermal resistance, junction to ambient air r q ja 500 (1) c/w notes: (1) mounted on fr-4 printed-ciruit board. .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) sot -23 12/16/98 dimensions in inches and (millimeters) pin configuration 1 = base, 2 = emitter, 3 = collector. preliminary preliminary preliminary type marking BCX70g ag BCX70h ah BCX70j aj BCX70k ak
BCX70 series electrical characteristics ratings at 25?c ambient temperature unless otherwise specified symbol min. typ. max. unit dc current gain at v ce = 5 v, i c = 10 m a BCX70g h fe eeee at v ce = 5 v, i c = 10 m a BCX70h h fe 30 e e e at v ce = 5 v, i c = 10 m a BCX70j h fe 40 e e e at v ce = 5 v, i c = 10 m a BCX70k h fe 100 e e e at v ce = 5 v, i c = 2 ma BCX70g h fe 120 e 220 e at v ce = 5 v, i c = 2 ma BCX70h h fe 180 e 310 e at v ce = 5 v, i c = 2 ma BCX70j h fe 250 e 460 e at v ce = 5 v, i c = 2 ma BCX70k h fe 380 e 630 e at v ce = 1 v, i c = 50 ma BCX70g h fe 50 e e e at v ce = 1 v, i c = 50 ma BCX70h h fe 70 e e e at v ce = 1 v, i c = 50 ma BCX70j h fe 90 e e e at v ce = 1 v, i c = 50 ma BCX70k h fe 100 e e e collector-emitter saturation voltage at i c = 10 ma, i b = 0.25 ma v cesat 50 e 350 mv at i c = 50 ma, i b = 1.25 ma v cesat 100 e 550 mv base-emitter saturation voltage at i c = 10 ma, i b = 0.25 ma v besat 600 e 850 mv at i c = 50 ma, i b = 1.25 ma v besat 700 e 1050 mv base-emitter voltage at v ce = 5 v, i c = 2 ma v be 550 650 750 mv at v ce = 5 v, i c = 10 m av be e 520 e mv at v ce = 1 v, i c = 50 ma v be e 780 e mv collector cut-off current at v cb = 45 v i cbo e e 20 na at v cb = 45 v, t a = 150 cee20 m a emitter cut-off current at v eb = 4 v i ebo e e 20 na gain-bandwidth product at v ce = 5 v, i c = 10 ma, f = 100 mhz f t 100 250 e mhz collector-base capacitance at v cb = 10 v, f = 1 mh z c cbo e 1.7 e pf emitter-base capacitance at v eb = 0.5 v, f = 1 mh z c ebo e11epf noise figure at v ce = 5 v, i c = 200 m a, r s = 2 k w , f= 1khz, b = 200hz f e 2 6 db
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